A modeling of the structure and favorable H-docking sites and defects for the high-pressure silica polymorph stishovite

Physics and Chemistry of Minerals

Volumn 31, Issue 4, 2004, Pages 232-239

  Gibbs, G V ^a   Cox, D F ^a   Ross, N L ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Diffraction methods; Spectral studies; Super cell structure

Indexed keywords

ALUMINUM; ANNEALING; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; DOCKING; HYDROGEN;

STISHOVITE; VACANCY DEFECTS;

SILICA;

CRYSTAL CHEMISTRY; CRYSTAL STRUCTURE; HIGH PRESSURE; MODELING; STISHOVITE;

EID: 2442684172     PISSN: 03421791     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00269-004-0379-x     Document Type: Article

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