Nonlinear I-V characteristics of doped SnO2

Materials Science and Engineering: B

Volumn 110, Issue 2, 2004, Pages 168-171

  Dhage, S R ^a   Choube, Vandana ^a   Ravi, V ^a  

^a NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

Ceramics; Diffraction; Doping effects; Electrical measurements; Electron microscopy; Schottky barrier

Indexed keywords

ANNEALING; ANTIMONY; CERAMIC MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DIFFRACTION; DIFFRACTOMETERS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; GRAIN SIZE AND SHAPE; OXYGEN; SCHOTTKY BARRIER DIODES; SINTERING; TANTALUM;

DOPING EFFECTS; ELECTRICAL MEASUREMENTS; OHMIC SILVER CONTACTS; SINTERED PELLETS; X RAY DIFFRACTOMETER;

TIN COMPOUNDS;

EID: 2442682007     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.02.003     Document Type: Article

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