High power diode-end-pumped Nd: YVO4 laser

Zhongguo Jiguang/Chinese Journal of Lasers

Volumn 31, Issue 1, 2004, Pages 19-21

  Zhang, Hong Rui ^a   Gao, Ming Yi ^a   Zheng, Yi ^a   Yao, Jian Quan ^b  

^a ZHENGZHOU UNIVERSITY   (China)

^b TIANJIN UNIVERSITY   (China)

Author keywords

Doped concentration; End pumped; Laser diode; Laser technology; Nd: YVO4 laser

Indexed keywords

SEMICONDUCTOR LASERS; YTTRIUM COMPOUNDS;

DOPED CONCENTRATION; LASER DIODE END PUMPED; OPTICAL CONVERSION EFFICIENCY;

CONTINUOUS WAVE LASERS;

EID: 2442672019     PISSN: 02587025     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. 4 laser [J]. Chinese J. Lasers, 2000, A27(4): 298-302
2. 4 laser [J]. Acta Optica Sinica, 2000, 20(4): 484-488
3. 4 crystals with various doping levels and lengths [J]. Optics and Laser Technol., 2001, 33(1): 47-51
4. 4 laser [J]. Chinese J. Lasers, 2000, A27(6): 481-484
5. 4 laser with high repetition rates and short pulse width [J]. Chinese J. Lasers, 2002, A29(6): 489-491
6. 19 lasers [J]. IEEE J. Quantum Electron., 1989, 25 (8): 1845-1849
7. T. Y. Fan, R. L. Byer. Diode laser-pumped solid-state lasers [J]. IEEE J. Quantum Electron., 1988, QE-24(6): 895-912
8. Dai Teli. Semiconductor Diode-pumped Solid-state Laser [M]. Chengdu: Sichuan University Press, 1993. 81-93