Electrical resistivity and microstructure of pressureless reactive sintered MoSi2-SiC composite

Materials Chemistry and Physics

Volumn 86, Issue 1, 2004, Pages 16-20

  Zhang, Xiaoli ^a   Lu, Zhenlin ^b   Jin, Zhihao ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Composite; Contiguity; MoSi2 SiC; Resistivity

Indexed keywords

BRITTLENESS; COMPOSITE MATERIALS; CORROSION RESISTANCE; ELECTRIC CONDUCTIVITY; MICROSTRUCTURE; SILICON CARBIDE; SINTERING; TOPOLOGY; VOLUME FRACTION;

CONTIGUITY; MELTING POINT; MOSI2-SIC; THERMODYNAMIC COMPATIBILITY;

MOLYBDENUM COMPOUNDS;

EID: 2442660459     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2004.01.027     Document Type: Article

References (34)

1. Vissa A.A., Foston K. Ceram. Ind. 33:1999;22.
2. Petrovic J.J. Mater. Sci. Eng. A. 192/193:1995;31.
3. Li J., Yang G.Y., Zhu J. J. Am. Ceram. Soc. 83:2000;992.
4. Vasudevan A.K., Petrovic J.J. Mater. Sci. Eng. A. 155:1992;1.
5. Aikin R.M. Ceram. Eng. Sci. Proc. 12:1991;1643.
6. Yanagihara K., Maruyama T., Nagata K. Intermetallics. 3:1995;243.
7. Costa e silva A., Kaufman M.J. Mater. Sci. Eng. A. 195:1995;75.
8. Petrovic J.J., Vasudevan A.K. Mater. Sci. Eng. A. 261:1999;1.
9. Boettinger W.J., Perepezko J.H., Frankwicz P.S. Mater. Sci. Eng. A. 155:1992;33.
10. Chen H., Suzuki M. J. Mater. Sci. 36:2001;5773.
11. Vasudevan M.K., Thom A.J., Akinc M. Intermetallics. 7:1999;153.
12. Yanagihara K., Maruyama T., Nagata K. Intermetallics. 3:1995;243.
13. Yanagihara K., Maruyama T., Nagata K. Intermetallics. 5:1997;1.
14. Ting J.M. J. Am. Ceram. Soc. 77:1994;2751.
15. Suzuki Y., Morgan P.E.D., Niihara K. J. Am. Ceram. Soc. 81:1998;3141.
16. Subrahmanyam J., Mohan Rao R. J. Mater. Res. 10:1995;1226.
17. Kung H., Lu Y.C., Bartlett A.H., Castro R.G., Petrovic J.J. J. Mater. Res. 13:1998;1522.
18. Tanaka K., Nawata K., Inui H., Yamaguchi M., Koiwa M. Intermetallics. 6:1998;607.
19. Zhu Q., Shobu K. J. Mater. Sci. 35:2000;863.
20. Ting M. J. Mater. Sci. 30:1995;4027.
21. Jayashankar S., Kaufman M.J. J. Mater. Res. 8:1993;1428.
22. Henager C.H. Jr., Brimhall J.L. Mater. Sci. Eng. A. 155:1992;109.
23. Ik Lee J., Hecht N.L. J. Am. Ceram. Soc. 81:1998;421.
24. Ma Q., Yang Y.Q., Kang M.K., Xue Q.J. Compos. Sci. Technol. 61:2001;963.
25. Fu X.W., Yang W.Y., Zhang L.Q. J. Univ. Sci. Technol. Beijing. 23:2001;249.
26. Lux F. J. Mater. Sci. 28:1993;285.
27. Fan Z., Miodownik A.P., Tsakiropoulos P. Mater. Sci. Technol. 12:1993;1094.
28. Fan Z. Acta Metall. Mater. 43:1998;43.
29. W.X. Zhang, Electrician Measurement, HuaNanLiGong University, Guang Zhou, 1991, p. 2704.
30. Fan Z., Miodownik A.P., Tsakiropoulos P. Mater. Sci. Technol. 9:1993;1094.
31. Z.L. Lu, Reactive sintering SiC materials and its electricity, oxidation characteristic, Doctorate Thesis, Xi'an JiaoTong University, 2000, p. 17.
32. Zhang X.L., Lu Z.L., Jin Z.H. China Molyb. Ind. 3:2002;29.
33. Morris D.G. Mater. Sci. Eng. A. 251:1998;262.
34. L.M. Hongmao, Engineering Ceramic, China Science Publisher, 1989, p. 124 (S.-X. Chen, Trans.).