CMOS image sensor using a floating diffusion driving buried photodiode

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 47, Issue , 2004, Pages

  Mabuchi, Keiji ^a   Nakamura, Nobuo ^a   Funatsu, Eiichi ^a   Abe, Takashi ^a   Umeda, Tomoyuki ^a   Hoshino, Tetsuro ^a   Suzuki, Ryoji ^a   Sumi, Hirofumi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENT; ELECTRON LEAKAGE; FLOATING DIFFUSION (FD); HOLE ACCUMULATION DIODES (HAD);

AMPLIFICATION; CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; DIFFUSION; IMAGE QUALITY; MICROPROCESSOR CHIPS; MOS DEVICES; PHOTODIODES; SCHEMATIC DIAGRAMS; TRANSISTORS;

IMAGE SENSORS;

EID: 2442646329     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. R. M. Guidash et al., "A 0.6μm CMOS Pinned Photodiode Color Image Technology," IEDM Technical Digest, pp. 927-929, Dec. 1997.
2. K. Yonemoto, H. Sumi, R. Suzuki, and T. Ueno, "A CMOS Image sensor with a Simple FPN-Reduction Technology and a Hole Accumulated Diode," ISSCC Dig. Tech. Papers, pp. 102-108, Feb. 2000.
3. O. Yadid-Pecht and E. Fossum, "Image Sensor with Ultra-High-Linear-Dynamic Range Utilizing Dual Output CMOS Active Pixel Sensors," IEEE Trans. Elec. Dev., special issue on Solid State Image Sensors, vol. 44, no. 10, pp. 1721-1724, Oct. 1997.