Evidence for the occupation of DX centers in In0.29Al0.71As

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2944-2947

  Young, A P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2442634256     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588939     Document Type: Article

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