Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 669-676

  Chong, Yung Fu ^a   Gossmann, Hans Joachim L ^b   Pey, Kin Leong ^c   Thompson, M O ^d   Wee, Andrew T S ^e   Tung, C H ^f  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b AXCELIS TECHNOLOGIES   (United States)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d Cornell University   (United States)

^e NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^f INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Boron penetration; Gate oxide reliability; Laser thermal processing (LTP); Poly depletion

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); INTERFACES (MATERIALS); LASER APPLICATIONS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

AMORPHOUS SILICON GATE; BORON PENETRATION; LASER THERMAL PROCESSING; ULTRATHIN GATE OXIDE;

MOS CAPACITORS;

EID: 2442612995     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826866     Document Type: Article

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