How to prevent a runaway chemical reaction in the isotropic etching of silicon with HF/HNO 3/CH 3COOH or HNA solution

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5276, Issue , 2004, Pages 270-279

  Hui, Wing C ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Acetic acid; Autocalalytic; Etching; HNA; Hydrofluoric acid; Isotropic; Nitric acid; Runaway; Safety; Silicon

Indexed keywords

AUTOCATALYTIC; HNA; ISOTROPIC; RUNAWAY;

ACETIC ACID; ETCHING; HYDROFLUORIC ACID; MASS TRANSFER; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; NATURAL CONVECTION; NITRIC ACID; SAFETY FACTOR; VOLUME FRACTION;

SILICON;

EID: 2442530612     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.522944     Document Type: Conference Paper

References (5)

1. Conrad Yu and Wing C. Hui, "Method for Making Circular Tubular Channels with Two Silicon Wafers," United States Patent, Patent Number: 5,575,929, 1996.
2. H. Robbins and B. Schwartz, "Chemical etching of silicon, II. The system: HF, HN03, HC2H302," J. Electrochem. Soc., vol. 106, p. 505, 1959.
3. B. Schwartz and H. Robbins, '"Chemical etching of silicon, IV. Etching technology.," J. Electrochem. Soc., vol. 123, p. 1903, 1976.
4. H. Huraoka, T. Ohhashi, and Y. Sumitomo, '"Controlled preferential etching technology," in Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Eds. (The Electrochemical Society Softbound Symposium Ser., Princeton, N. J.), p. 327, 1973.
5. W. Kern, '"Chemical etching of silicon, germanium, gallium arsenide, and gallium phosphide," RCA Rev., vol. 29, p. 278, 1978.