Observation of current modulation through self-assembled monolayer molecule in transistor structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 A, 2004, Pages

  Sasao, Kazuki ^a   Azuma, Yasuo ^a   Kaneda, Naotaka ^a   Hase, Eiji ^a   Miyamoto, Yasuyuki ^a   Majima, Yutaka ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electron beam lithography; SAM; Shadow mask; Transistor

Indexed keywords

ANISOTROPY; CRYSTALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ETCHING; EVAPORATION; LEAKAGE CURRENTS; MODULATION; MONOLAYERS; NANOTECHNOLOGY; SELF ASSEMBLY; THERMOOXIDATION; TRANSCONDUCTANCE;

DRAIN CURRENT; DRAIN VOLTAGE; SELF-ASSEMBLED MONOLAYERS (SAM); SHADOW MASKS;

TRANSISTORS;

EID: 2442526807     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l337     Document Type: Article

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