Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM

Journal of Crystal Growth

Volumn 266, Issue 4, 2004, Pages 519-522

  Xiao, Jingzhong ^a,d   Yin, Shaotang ^b   Shao, Manjun ^c   Zhang, Xiyi ^a  

^a FUDAN UNIVERSITY   (China)

^b ANHUI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^c INSTITUTE OF CHEMISTRY   (China)

^d NANJING UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A1. Dislocation etch pit; A1. Environmental scanning electron microscopy; A1. Image contrast; A2. Czochralski method; B1. Sapphire

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS;

DISLOCATION ETCH PIT; ENVIRONMENTAL SCANNING ELECTRON MICROSCOPY; IMAGE CONTRAST; INSULATING SPECIMENS;

CRYSTAL STRUCTURE;

EID: 2442437884     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.03.021     Document Type: Article

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