Transport properties of C60 thin film FETs with a channel of several-hundred nanometers

Science and Technology of Advanced Materials

Volumn 6, Issue 5, 2005, Pages 427-430

  Matsuoka, Yukitaka ^a,b   Inami, Nobuhito ^a,b   Shikoh, Eiji ^a,b   Fujiwara, Akihiko ^a,b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

C60; Field effect transistor; Fullerene; Transport property

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; THIN FILM DEVICES; TRANSPORT PROPERTIES;

C60; CONTACT-RESISTANCE; DRAIN CURRENT; SOURCE-DRAIN VOLTAGE;

FULLERENES;

EID: 24344452131     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2005.01.005     Document Type: Conference Paper

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