ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 84-90

  Cester, A ^a   Gerardin, S ^a   Tazzoli, A ^a   Paccagnella, A ^a   Zanoni, E ^a   Ghidini, G ^b   Meneghesso, G ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

CMOS device reliability; Oxide Breakdown Electrostatic Discharge robustness

Indexed keywords

EID: 24144500114     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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