Microstructure of femtosecond laser-induced grating in amorphous silicon

Optics Express

Volumn 13, Issue 17, 2005, Pages 6445-6453

  Lee, Geon Joon ^a   Park, Jisun ^a   Kim, Eun Kyu ^a   Lee, YoungPak ^a   Kim, Kyung Moon ^b   Cheong, Hyeonsik ^b   Yoon, Chong Seung ^a   Son, Yong Duck ^c   Jang, Jin ^c  

^a Hanyang University   (South Korea)

^b Sogang University   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTALLIZATION; LASER OPTICS; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON FILMS; FEMTOSECOND LASER-INDUCED GRATING (FLIG) FORMATION; MICRO-RAMAN SPECTROSCOPY; PROBE-BEAM DIFFRACTION;

DIFFRACTION GRATINGS;

EID: 24144483068     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OPEX.13.006445     Document Type: Review

References (21)

1. D. E. Carlson, and C.R. Wronski, "Amorphous silicon solar cell," Appl. Phys. Lett. 28, 671-673 (1976).
2. B. K. Nayak, B. Eaton, J. A. A. Selvan, J. Mcleskey, M. C. Gupta, R. Romero, and G. Ganguly, "Semiconductor laser crystallization of a-Si:H on conducting tin-oxide-coated glass for solar cell and display applications, " Appl. Phys. A 80, 1077-1080 (2005).
3. T. Suzuki, and S. Adachi, "Optical properties of amorphous Si partially crystallized by thermal annealing," Jpn. J. Appl. Phys. 32, 4900-4906 (1993).
4. J. S. Im, and H. J. Kim, "Phase transformation mechanisms involved in excimer laser crystallization of amorphous sillicon films," Appl. Phys. Lett. 63, 1969-1971 (1993).
5. M. Miyasaka, and J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase-crystallized sillicon films," J. Appl. Phys. 86, 5556-5565 (1999).
6. S. Y. Yoon, J. Y. Oh, C. O. Kim, and J. Jang, "Low temperature solid-phase crystallization of amorphous sillicon at 380°C," J. Appl. Phys. 84, 6463-6465 (1998).
7. A. Mimura, N. Konishi, K. Ono, J. Ohwada, Y. Hosokawa, Y. Ono, T. Suzuki, K. Miyata, and H. Kawakami, "High performance low-temperature poly-Si n-channel TFTs for LCD," IEEE Trans. Electron Devices 36, 351-359 (1989).
8. J. S. Im, and H. J. Kim, "On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films," Appl. Phys. Lett. 64, 2303-2305 (1994).
9. A. T. Voutsas, A. Limanov, and J. S. Im, "Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films," J. Appl. Phys. 94, 7445-7452 (2003).
10. C. Hayzelden, and J. L. Batstone, "Suicide formation and suicide-mediated crystallization of nickel-implanted amorphous silicon thin films," J. Appl. Phys. 73, 8279-8289 (1993).
11. J. Jang, J. Y. Oh, S. K. Kim, K. J. Cho, S. Y. Yoon, and C. O. Kim, "Electric-field-enhanced crystallization of amorphous silicon," Nature (London) 395, 481-483 (1998).
12. J.-M. Sieh, Z.-H. Chen, B.-T. Dai, Y.-C. Wang, A. Zaitsev, and C.-L. Pan, "Near-infrared femtosecond laser-induced crystallization of amorphous silicon," Appl. Phys. Lett. 85, 1232-1234 (2004).
13. B. N. Chichkov, C. Momma, S. Nolte, F. von Alvensleben, and A. Tunnermann, "Femtosecond, picosecond and nanosecond laser ablation of solids," Appl. Phys. A 63, 109-115 (1996).
14. Y. Kuroiwa, N. Takeshima, Y. Narita, and S. Tanaka, "Arbitrary micropatterning method in femtosecond laser microprocessing using diffractive optical elements," Opt. Express 12, 1908-1915 (2004), http://www.opticsexpress.org/abstract.cfm?URI=OPEX-12-9-1908.
15. K. M. Davis, K. Miura, N. Sugimoto, and K. Hirao, "Writing waveguides in glass with a femtosecond," Opt. Lett. 21, 1729-1731 (1996).
16. S. Kawata, H.-B. Sun, T. Tanaka, and K. Takada, "Finer features for functional microdevices: Micromachines can be created with higher resolution using two-photon absorption," Nature (London) 412, 697-698 (2001).
17. Z. Iqbal, and S. Veprek, "Raman scattering from hydrogenated microcrystalline and amorphous silicon," J. Phys. C: Solid State Phys. 15, 377-392 (1982).
18. L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger, and H. Wagner, "Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth," Philos. Mag. A 77, 1447-1460 (1998).
19. T. Sameshima, "Laser processing for thin film transistor applications," Mater. Sci. Eng. B 45, 186-193 (1997).
20. G. Aichmayr, D. Toet, M. Mulato, P. V. Santos, A. Spangenberg, S. Christiansen, M. Albrecht, and H. P. Strunk, "Dynamics of lateral grain growth during the laser interference crystallization of a-Si," J. Appl. Phys. 85, 4010-4023 (1999).
21. C.-H. Oh, M. Ozawa, and M. Matsumura, "A novel phase-modulated excimer-laser crystallization method of silicon thin films," Jpn. J. Appl. Phys. 37, L492-L495 (1998).