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Volumn E88-C, Issue 5, 2005, Pages 951-958

Compact and low-power-consumption 40-Gbit/s, 1.55-μm electro-absorption modulators

Author keywords

40 Gbit s; EAM DFB laser; Electro absorption modulator; InGaAlAs; InGaAsP; Uncooled operation

Indexed keywords

ABSORPTION; DISTRIBUTED FEEDBACK LASERS; ENERGY UTILIZATION; FABRICATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SINGLE MODE FIBERS; TRANSMITTERS;

EID: 24144471216     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.5.951     Document Type: Conference Paper
Times cited : (4)

References (7)
  • 1
    • 0026243083 scopus 로고
    • Quantum well carrier sweep out: Relation to electroabsorption and exciton saturation
    • Oct.
    • A.M. Fox, D.A.B. Miller, G. Livescu, J.E. Cunningham, and W.Y. Jan., "Quantum well carrier sweep out: Relation to electroabsorption and exciton saturation," IEEE J. Quantum Electron., vol.27, no.10, pp.2281-2295, Oct. 1991.
    • (1991) IEEE J. Quantum Electron. , vol.27 , Issue.10 , pp. 2281-2295
    • Fox, A.M.1    Miller, D.A.B.2    Livescu, G.3    Cunningham, J.E.4    Jan, W.Y.5
  • 5
    • 0742287113 scopus 로고    scopus 로고
    • High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules
    • Jan.
    • N.C. Frateschi, J. Zhang, W.J. Choi, H. Gebretsadik, R. Jambunathan, and A.E. Bond, "High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules," Electron. Lett., vol.40, no.2, pp.140-141, Jan. 2004.
    • (2004) Electron. Lett. , vol.40 , Issue.2 , pp. 140-141
    • Frateschi, N.C.1    Zhang, J.2    Choi, W.J.3    Gebretsadik, H.4    Jambunathan, R.5    Bond, A.E.6
  • 6
    • 0037130414 scopus 로고    scopus 로고
    • Advantages of optical modulators with InGaAlAs/InGaALAs MQW structure
    • July
    • J. Shimizu, M. Aoki, T. Tsuchiya, M. Shirai, A. Taike, T. Ohtoshi, and S. Tsuji, "Advantages of optical modulators with InGaAlAs/InGaALAs MQW structure," Electron. Lett., vol.38, no.15, pp.821-822, July 2002.
    • (2002) Electron. Lett. , vol.38 , Issue.15 , pp. 821-822
    • Shimizu, J.1    Aoki, M.2    Tsuchiya, T.3    Shirai, M.4    Taike, A.5    Ohtoshi, T.6    Tsuji, S.7
  • 7
    • 0029546269 scopus 로고
    • Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulator
    • Dec.
    • T. Ido, H. Sano, S. Tanaka, and H. Inoue, "Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulator," IEEE Photon. Technol. Lett., vol.7, no.12, pp.1421-1423, Dec. 1995.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , Issue.12 , pp. 1421-1423
    • Ido, T.1    Sano, H.2    Tanaka, S.3    Inoue, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.