The influence of K4Fe(CN)6 on the photosensitivity of cubic AgCl microcrystal

Chinese Physics

Volumn 14, Issue 2, 2005, Pages 404-408

  Li, Xiao Wei ^a   Liu, Rong Juan ^a   Geng, Ai Cong ^a   Yang, Shao Peng ^a   Fu, Guang Sheng ^a  

^a HEBEI UNIVERSITY   (China)

Author keywords

Capture cross section; Doping concentration; Photosensitivity; Shallow electron trap; Trap depth

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ELECTRON TRAPS; LIGHT ABSORPTION; MICROWAVES; PHOTOSENSITIVITY;

CAPTURE CROSS SECTION; DOPING CONCENTRATION; SHALLOW ELECTRON TRAP; TRAP DEPTH;

SILVER COMPOUNDS;

EID: 24144464220     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/14/2/032     Document Type: Article

References (9)

1. Dai H, Liang B, Zhuang S Y, Sun J and Zhang D D 2001 Photogr. Sci. Photochem. 19 262 (in Chinese)
2. Mydlarz Z G, Budz J A and Bell E L 1998 US Patent 5 783 373
3. Oikawa T, Saeki N, Kaneda T, Hirano A and Tani T 1995 J. Imag. Sci. Tech. 39 233
4. Yang S P et al 2003 Chin. Phys. 12 1435
5. Yang S P et al 2003 Acta Phys. Sin. 52 2649 (in Chinese)
6. Liu X H 2001 Inform. Record. Mater. 2 36
7. Bryant R A et al 1998 US Patent 5 728 517
8. Yang S P, Li X W, Han L and Fu G S 2002 Chin. Phys. Lett. 19 429
9. Li X W, Geng A C, Yang S P, Han L and Fu G S 2003 Chin. Phys. Lett. 20 1323