A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation

Chinese Physics

Volumn 14, Issue 4, 2005, Pages 808-811

  Ma, Zhong Fa ^a   Zhuang, Yi Qi ^a   Du, Lei ^a   Wei, Shan ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

c e; Model; MOSFET; Percolation; RTS noise

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); MONTE CARLO METHODS; NUMERICAL METHODS; PERCOLATION (SOLID STATE); SIGNAL PROCESSING; TELEGRAPH SYSTEMS;

ΤC/ΤE; RANDOM TELEGRAPH SIGNAL (RTS); TRAP INTERFACES;

MOSFET DEVICES;

EID: 24144439061     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/14/4/029     Document Type: Article

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