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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 6, 2005, Pages 1197-1202

Numerical modeling of the magnetoelectric effect in magnetostrictive piezoelectric bilayers

(7) Wang, Y a,b Yu, H a,b Zeng, M a,b Wan, J G a,b Zhang, M F a,b Liu, J M a,b Nan, C W c

a NANJING UNIVERSITY (China)

b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

c TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; MAGNETOELECTRIC EFFECTS; NATURAL FREQUENCIES; PIEZOELECTRIC DEVICES; RESONANCE; VOLUME FRACTION;

BILAYER STRUCTURES; ELECTROMECHANICAL RESONANCE (EMR); FREQUENCY PROFILES; VOLTAGE COEFFICIENTS;

MAGNETOSTRICTIVE DEVICES;

EID: 24144434681 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2983-5 Document Type: Article

Times cited : (36)

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