A new memory element based on silicon nanoclusters in a ZrO2 insulator with a high permittivity for electrically erasable read-only memory

Fizika i Tekhnika Poluprovodnikov

Volumn 39, Issue 6, 2005, Pages 748-753

  Gritsenko, V A ^a   Nasyrov, K A ^a   Gritsenko, D V ^a   Novikov, Yu N ^a   Aseev, A L ^a   Lee, J H ^a   Lee, J W ^a   Kim, C W ^a  

^a NONE

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EID: 24044542974     PISSN: 00153222     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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