Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers

Kvantovaya Elektronika

Volumn 35, Issue 4, 2005, Pages 316-322

  Batrak, D V ^a   Bogatova, S A ^a   Borodaenko, A V ^a   Drakin, A E ^a   Bogatov, A P ^a  

^a NONE

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EID: 24044437816     PISSN: 03687147     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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