Transient acceleration process of electrons in ZnS-type thin film electroluminescence devices

Journal of Physics Condensed Matter

Volumn 11, Issue 9, 1999, Pages 2145-2151

  Hui, Zhao ^a   Yongsheng, Wang ^a   Zheng, Xu ^a   Xurong, Xu ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24044434085     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/9/011     Document Type: Article

References (9)

1. Ono Y A 1995 Electroluminescent Displays (Singapore: World Scientific) p 35
2. Bringuier E 1997 High-field conduction in semi-insulating ZnS films Phil. Mag. B 75 209-28
3. Jacoboni C and Lugli P 1989 The Monte Carlo Method for Semiconductor Device Simulation (New York: Springer) pp 104-27
4. Bhattacharyya K, Goodnick S M and Wager J F 1993 Monte Carlo simulation of electron transport in alternating-current thin-film electroluminescent devices J. Appl. Phys. 73 3390-5
5. Bringuier E 1989 Charge transfer in ZnS-type electroluminescence J. Appl. Phys. 66 1314-25
6. Sasakura H, Kobayashi H, Tanaka S, Mita J, Tanaka T and Nakayama H 1981 The dependence of electroluminescent characteristics of ZnS:Mn thin films upon their device parameters J. Appl. Phys. 52 6901-6
7. Ono Y A 1995 Electroluminescent Displays (Singapore: World Scientific) p 23
8. Brennan K 1988 Theory of high-field electronic transport in bulk ZnS and ZnSe J. Appl. Phys. 64 4024-31
9. Fogarty J, Kong W and Solanki R1995 Monte Carlo simulation of high field electron transport in ZnS Solid-State Electron. 38 653-60