Improved photoluminescence of 1.26 μm InGaAsGaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers

Applied Physics Letters

Volumn 87, Issue 6, 2005, Pages

  Chang, Yi An ^a   Kuo, Hao Chung ^a   Chang, Ya Hsien ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; EMISSION WAVELENGTHS; HALF MAXIMUM VALUE; INDIUM-GRADED INTERMEDIATE LAYERS;

ACTIVATION ENERGY; ANTIMONY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE ACTIVE AGENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 23944516299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2009048     Document Type: Article

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