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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3832-3835

Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress

(4) Chen, Kun Ming a Hu, Hsin Hui b Huang, Guo Wei a Chang, Chun Yen b

a NATIONAL NANO DEVICE LABORATORIES (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Body contact device; Floating body effect; Hot carrier stress; Low frequency noise; SOI MOSFET

Indexed keywords

ACOUSTIC NOISE; DEGRADATION; FIELD EFFECT TRANSISTORS; FREQUENCIES; LEAKAGE CURRENTS; STRESS ANALYSIS;

FLOATING BODY EFFECTS; HOT CARRIER STRESS; LOW FREQUENCY NOISE; SOI MOSFET;

MOS DEVICES;

EID: 23944514262 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.3832 Document Type: Article

Times cited : (1)

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