1/f noise and generation/recombination noise in SiGe HBTs on SOI

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1468-1477

  Lukyanchikova, Nataliya ^a   Garbar, Nikolay ^a   Smolanka, Alexander ^a   Lokshin, Mikhail ^a   Hall, Stephen ^b   Buiu, Octavian ^b   Mitrovic, Ivona Z ^b   El Mubarek, Huda A W ^c   Ashburn, Peter ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

1 f noise; Bipolar transistor; Generation recombination noise; Silicon germanium heterojunction bipolar transistorsSiGe HBTs; SOI; Stress

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

GENERATION NOISE; RECOMBINATION NOISE; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 23944474408     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850697     Document Type: Article

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