The impact of semiconductor technology scaling on CMOS RF and digital circuits for wireless application

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1415-1422

  Lee, Kwyro ^a   Nam, Ilku ^a   Kwon, Ickjin ^b   Gil, Joonho ^c   Han, Kwangseok ^d   Park, Sungchung ^a   Seo, Bo Ik ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c RadioPulse Inc   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

CMOS scaling; Digital RF; Integrated passives; RF CMOS; Wireless digital circuits

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITORS; DIGITAL CIRCUITS; ELECTRIC INDUCTORS; MIM DEVICES; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; VARACTORS; WIRELESS TELECOMMUNICATION SYSTEMS;

CMOS SCALING; DIGITAL RF; INTEGRATED PASSIVES; RF CMOS; WIRELESS DIGITAL CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 23944448193     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850632     Document Type: Article

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