Optoelectronic properties of hydrogenated amorphous germanium deposited by rf-PECVD as a function of applied rf-power

Journal of Physics Condensed Matter

Volumn 17, Issue 33, 2005, Pages 5149-5158

  Bouizem, Y ^a   Belfedal, A ^a   Sib, J D ^a   Kebab, A ^a   Chahed, L ^a  

^a UNIVERSITY OF ORAN   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRODES; HYDROGENATION; LIGHT ABSORPTION; OPTIMIZATION; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SOLAR CELLS;

CONSTANT PHOTOCURRENT METHOD (CPM); OPTICAL BAND-GAP; PHOTOTHERMAL DEFLECTION SPECTROSCOPY (PDS);

GERMANIUM;

EID: 23844527410     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/33/017     Document Type: Article

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