Crystal structure and thermoelectric properties of Al-containing Re silicides

Materials Research Society Symposium Proceedings

Volumn 842, Issue , 2005, Pages 425-430

  Terada, Eiji ^a   Oh, Min Wook ^b   Wee, Dang Moon ^b   Inui, Haruyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEFECTS; MICROSTRUCTURE; RHENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; THERMOELECTRICITY;

ANISOTROPIC BEHAVIORS; ELECTRICAL TRANSPORT; SEMICONDUCTING BEHAVIOR; THERMOELECTRIC PROPERTIES;

CRYSTAL STRUCTURE;

EID: 23844490255     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. A. Heinrich, H. Griebmann, G. Behr, L. Ivanenko, J. Schumann and H. Vinzelberg, Thin Solid Films 381, 287 (2001).
2. J.P. Becker. J.E. Mahan and R.G. Long, J. Vac. Sci. Tech. A, 13, 1133 (1995)
3. J-J Gu, K. Kuwabara, K. Tanaka, H. Inui, M. Yamaguchi, A. Yamamoto, T. Ohta and H. Obara in Defect Properties and Related Phenomena in Intermetallic Alloys, edited by E. P. George, H. Inui, M. J. Mills, and G. Eggeler,(Mater. Res. Soc. Proc. 753, Boston, Massachusetts, 2002) p. 501-506.
4. Y. Sakamaki, K. Kuwabara, Gu Jiajun, H. Inui, M. Yamaguchi, A. Yamamoto and H. Obara, Materials Science Forum 426-432, 1733-1738 (2003).
5. T. Siegrist, F. Hulliger and G. Travaglini, J. Less-Common Met. 92, 119 (1983).
6. V. S. Neshpor and G. V. Samsonov, Izv. Akad. Nauk S.S.S.R., Neorg. Mater. 1, 655 (1965)
7. Inorg. Mater. (U.S.S.R.) 1, 599 (1965).
8. V. S. Neshpor and G. V. Samsonov, Fiz. Met. Metalloved. 11, (4) 638 (1961)
9. Sov. Phys.-Phys. Met. Metallogr. 11, (4) 146(1961).