Low-temperature H2-plasma cure for spin-on porous MSQ

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 483-487

  Yoneda, K ^a   Yoshie, T ^a   Ohashi, N ^a   Kobayashi, N ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE EFFECTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SPIN COATING; STRENGTH OF MATERIALS; STRUCTURE (COMPOSITION);

BLANKET FILMS; METALLIZATION PROCESSES; POROGEN MATERIALS; STRESS INDUCED VOIDING (SIV);

POROUS MATERIALS;

EID: 23844490119     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. L. P. Li, et. al., VLSI Symposium Digest of Technical Papers, p. 105 (2003)
2. S. Sone et al., VLSI Symposium Digest of Technical Papers, p. 125 (2003)
3. S. Kondo, et al., Proc. of ITC2003, p. 86 (2003)