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Volumn , Issue , 2003, Pages 349-354

Effect of diffusion barriers on electrical performance and reliability of Cu metallization in 0.13 μn Cu/ Ultra-low k technology

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FLASH LAYER (DFL); NON-PATTERN WAFERS; VOLTAGE RAMP TEST;

EID: 23844474785     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.