Effects of strain relaxation on the electronic properties of epitaxial Sr 2FeMoO 6 grown by pulsed laser deposition on SrTiO 3 (001)

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Fix, T ^a   Stoeffler, D ^a   Colis, S ^a   Ulhaq, C ^a   Versini, G ^a   Vola, J P ^a   Huber, F ^a   Dinia, A ^a  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURES; HETEROEPITAXY; SPIN POLARIZATION; STRAIN RELAXATION;

CRYSTAL DEFECTS; ELECTRON BEAM LITHOGRAPHY; ELECTRONIC PROPERTIES; LATTICE CONSTANTS; MAGNETIZATION; PULSED LASER DEPOSITION; RELAXATION PROCESSES; STRAIN RATE; STRONTIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL GROWTH;

EID: 23844470210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1925761     Document Type: Article

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