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Volumn 4, Issue 4, 1996, Pages 261-277
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Hydrogenated carbon films produced by plasma-enhanced CVD from pentane in a three-electrode reactor
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Author keywords
Amorphous hydrogenated carbon films; Electronic properties; Ion bombardment; Plasma deposition
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Indexed keywords
CARBON;
ELECTRIC CONDUCTIVITY;
ELECTRIC INSULATORS;
ELECTRIC REACTORS;
ELECTROCHEMICAL ELECTRODES;
ELECTRON TRANSITIONS;
ELECTRONIC PROPERTIES;
GERMANIUM;
HYDROGENATION;
ION BOMBARDMENT;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR MATERIALS;
SILICON;
AMORPHOUS HYDROGENATED CARBON FILMS;
ELECTRIC CONDUCTION;
OPTICAL GAPS;
PLASMA DEPOSITION;
AMORPHOUS FILMS;
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EID: 23844459319
PISSN: 1524511X
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (7)
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References (22)
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