Intraband relaxation and its influences on quantum dot lasers

Chinese Physics Letters

Volumn 22, Issue 8, 2005, Pages 2077-2080

  Deng, Sheng Ling ^a   Huang, Yong Zhen ^a   Yu, Li Juan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; GROUND STATE; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS;

CARRIER DISTRIBUTIONS; HIGH INJECTION; INJECTION EFFICIENCY; INTRABAND RELAXATION; LIGHT EMISSION SPECTRUM; PERFORMANCE; QUANTUM-DOT LASERS; RELAXATION RATES; SINGLE MODE OPERATION;

QUANTUM DOT LASERS;

EID: 23844441045     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/8/070     Document Type: Article

References (8)

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7. Huang H and Deppe D G 2001 IEEE J. Quantum Electron. 37 691
8. Markus A et al 2003 Appl. Phys. Lett. 82 1818