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Volumn , Issue , 2004, Pages 480-483
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In-situ cleaned high-quality InGaAlAs-InGaAsP butt-joint grown by metal-organic vapor phase epitaxy
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BUTT WELDING;
ETCHING;
HETEROJUNCTIONS;
INDUCTIVELY COUPLED PLASMA;
INTERFACES (MATERIALS);
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
BUTT-JOINTED HETEROINTERFACE;
HETERO-INTERFACE;
OPTICAL-COUPLING EFFICIENCY;
QUANTUM WELL LASERS;
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EID: 23744509017
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (6)
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