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European Physical Journal D

Volumn 34, Issue 1-3, 2005, Pages 47-50

First principle study on the bonding mechanism of nanoring structure Ga8As8

(6) Sun, L Z a Chen, X S a Zhou, X H a Sun, Y L a Quan, Zh J a Lu, Wei a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; CHARGE DENSITY; ELECTRONIC STRUCTURE; GALLIUM ARSENIDE; NANORINGS; NANOSTRUCTURED MATERIALS;

BONDING CHARACTERISTICS; BONDING CHARGE DENSITY; BONDING MECHANISM; DENSITY-FUNCTIONAL APPROACH; FIRST PRINCIPLE CALCULATIONS; FIRST-PRINCIPLE STUDY; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; NANO-RING STRUCTURES; RINGS STRUCTURE; STABLE RINGS;

III-V SEMICONDUCTORS;

EID: 23744472472 PISSN: 14346060 EISSN: 14346079 Source Type: Journal
DOI: 10.1140/epjd/e2005-00116-7 Document Type: Conference Paper

Times cited : (7)

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