Study on the CMP mechanism and property of silicon wafer by nano-sized CeO2 abrasives

Zhongguo Jixie Gongcheng/China Mechanical Engineering

Volumn 16, Issue SUPPL., 2005, Pages 341-343

  Tan, Gang ^a  

^a RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

Chemical mechanical polishing (CMP); Nano sized cerium dioxide abrasive; Polishing mechanism; Roughness

Indexed keywords

EID: 23744449389     PISSN: 1004132X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)