Cavities owing to hydrogen in Si single crystals grown by continuously charging CZ method

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 146-149

  Iino, E ^a   Takano, K ^a   Kimura, M ^a   Yamagishi, H ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Cavities; Czochralski method; Hydrogen; Silicon

Indexed keywords

EID: 23644457634     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01373-3     Document Type: Article

References (7)

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