A novel double laser crystallization technique for producing location-controlled ultra-large polysilicon grain growth

Journal of the Korean Physical Society

Volumn 47, Issue 1, 2005, Pages 133-141

  Moon, Seungjae ^a  

^a Hanyang University   (South Korea)

Author keywords

Amorphous silicon; Double laser crystallization; Laser photoflash visualization; Nucleation; Polysilicon; Silicon thin film; Thin film transistor

Indexed keywords

EID: 23644455282     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. Y. H. Son, T. H. Lim, S. J. Park and H. J. Kim, J. Korean Phys. Soc. 42, 554 (2003).
2. C. M. Wu and E. S. Yang, Appl. Phys. Lett. 40, 49 (1982).
3. R. S. Sposili and J. S. Im, Appl. Phys. Lett. 69, 2864 (1996).
4. G. Aichmayr, D. Toet, M. Mulato, P. V. Santos, A. Spangenberg, S. Christiansen, M. Albercht and H. P. Strunk, J. Appl. Phys. 85, 4010 (1998).
5. K. Ishikawa, M. Ozawa, C. H. Oh and M. Matsumura, Jpn. J. Appl. Phys. 37, 731 (1998).
6. H. Kuriyama, T. Nohda, S. Ishida, T. Kuwahara, S. Noguchi, S. Kiyama, S. Tsuda and S. Nakano, Jpn. J. Appl. Phys. 32, 6190 (1993).
7. S. Moon, J. Korean Phys. Soc. 45, 1644 (2004).
8. S. Moon, M. Lee, M. Hatano and C. P. Grigoropoulos, Microscale Thermophys. Eng. 4, 25 (2000).
9. M. Born and W. Wolf, Principles of Optics, 6th Ed. (Cambridge University Press, Cambridge, 1980), Chap. 1.
10. Y. S. Touloukian, R. W. Powell, C. Y. Ho and P. G. Klemens, Thermophysical Properties of Matter (IFI/Plenum, New York-Washington, 1970), Vol. 2-5.
11. K. M. Shvarev, B. A. Baum and P. V. Gel'd, Sov. Phys. Sol. Stat. 16, 2111 (1975).