A study of the local electronic and atomic structure in a-Si xC1 -X amorphous alloys using ultrasoft X-ray emission spectroscopy

Semiconductors

Volumn 39, Issue 7, 2005, Pages 830-834

  Terekhov, V A ^a   Terukov, E I ^b   Trapeznikova, I N ^b   Kashkarov, V M ^a   Kurilo, O V ^a   Turishchev, S Yu ^a   Golodenko, A B ^a   Domashevskaya, E P ^a  

^a VORONEZH STATE UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23644432369     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1992643     Document Type: Article

References (9)

1. The Physics of Hydrogenated Amorphous Silicon, Ed. by J. D. Joannopoulos and G. Lucovsky (Springer, New York, 1984; Mir, Moscow, 1988), Part 2.
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3. É. Yu. Manukovskiǐ, Candidate's Dissertation (Voro-nezh, 2000).
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6. [Sov. Phys. Solid State 9, 2398 (1967)].
7. M. M. Garcia, I. Jimenez, L. Vazquez, et al., Appl. Phys. Lett. 72, 2105 (1998).
8. M. Lubbe, P. R. Bressler, W. Braun, et al., J. Anal. Chem. 361, 602 (1998).
9. Y. Muramatsu, H. Takenaka, Y. Ueno, et al., als.lbl.gov/als/compendium/ AbstractManager/frontend/ pagAuthors2.php?PersonID=10.