Study of ultrafast process in semiconductor

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 24, Issue 3, 2005, Pages 179-181

  Huang, Shi Hua ^a   Li, Xi ^a   Ling, Yan ^a   Lu, Fang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Energy relaxation; Femtosecond pulse laser; Momentum relaxation; Semiconductor

Indexed keywords

CHARGE CARRIERS; DIFFUSION; HIGH ENERGY LASERS; LASER PULSES; PHOTONS; PROBABILITY; REFLECTION; RELAXATION PROCESSES; SCATTERING; SEMICONDUCTOR QUANTUM DOTS;

ENERGY RELAXATION; FEMTOSECOND PULSE LASER; MOMENTUM RELAXATION; ULTRAFAST REFLECTION SPECTRUM;

SEMICONDUCTOR DEVICES;

EID: 23444457948     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. Yang Z C, Ho W. Alkali promotion of photodissociation of adsorbed Mo(CO) [J]. Phys. Rev. Lett., 1990, 65: 741.
2. Shah J. Hot electrons and phonons under high intensity photoexcitation of semiconductors [J]. Solid-State Electron., 1978, 21: 43.
3. Bigot J Y, Portella M T, Schoenlein R W, et al. Two-dimensional carrier-carrier screening in a quantum well [J]. Phys. Rev. Lett., 1991, 67: 636.