Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 246-256

  Bykova, S V ^a   Golyshev, V D ^a   Gonik, M A ^a   Tsvetovsky, V B ^a   Deshko, V I ^b   Karvatskii, A Ya ^b   Lenkin, A V ^b   Brandon, S ^c   Weinstein, O ^c   Virozub, A ^c   Derby, J J ^d   Yeckel, A ^d   Sonda, P ^d  

^a Ctr for Thermophys Res Thermo   (Russian Federation)

^b NATIONAL TECHNICAL UNIVERSITY OF UKRAINE   (Ukraine)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^d UNIVERSITY OF MINNESOTA   (United States)

Author keywords

A1. Interfaces; A2. Growth from melt; B1. Bismuth germanate

Indexed keywords

BISMUTH COMPOUNDS; HEAT CONVECTION; HEAT FLUX; HEAT RADIATION; INTERFACES (MATERIALS); ITERATIVE METHODS; PYROMETERS; REACTION KINETICS; SINGLE CRYSTALS; THERMAL EFFECTS;

BISMUTH GERMANATE; MELT/CRYSTAL INTERFACE KINETICS; OPTICAL THICKNESS; STEADY-STATE GROWTH;

CRYSTAL GROWTH FROM MELT;

EID: 2342646885     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.052     Document Type: Conference Paper

References (22)

1. Golyshev V.D., Gonik M.A., Tsvetovsky V.B. Instrum. Exp. Tech. 5:1998;153.
2. V.D. Golyshev, M.A. Gonik, V.B. Tsvetovsky, et al., Proceedings of the Academy of Sciences Series, Inorganic Materials, Vol. 6, 1999, p. 715.
3. Golyshev V.D., Gonik M.A., Tsvetovsky V.B., et al. J. Crystal Growth. 216:2000;428.
4. Golyshev V.D., Gonik M.A., Tsvetovsky V.B. J. Crystal Growth. 237-239:2002;735.
5. S.V. Bykova, V.D. Golyshev, M.A. Gonik, et al., High Temp.-High Pressures 35/36 (2003/2004), in press.
6. Vasiliev Ya.V., Golyshev V.D., Gonik M.A., et al. J. Tech. Phys. 70(5):2000;109.
7. Golyshev V.D., Gonik M.A. High Temp.-High Pressures. 32:2000;581.
8. Golyshev V.D., Gonik M.A., Tsvetovsky V.B. (Peverhnost) X-ray, Synchrotron & Neutron Researches. 11:2002;104.
9. A.A. Chernov, in: M. Cardona, G. Gintherodt (Eds.), Modern Crystallography III, Crystal Growth, Vol. 36, Springer Series in Solid State, Springer, Berlin, 1984.
10. Golyshev V.D., Gonik M.A., Tsvetovsky V.B. Int. J. Mod. Phys. B. 16:2002;34.
11. Golyshev V.D., Gonik M.A. High Temp. -High Pressures. 26:1994;595.
12. Golyshev V.D., Gonik M.A. J. Crystal Growth. 262:2004;202.
13. Golyshev V.D., Gonik M.A. Crystal Properties and Prep. 36-38:1991;623.
14. S.V. Bykova, V.S. Dozhdikov, V.D. Golyshev, et al., Book of Abstracts, Proceedings of the Xth Russian Conference on Thermophysical Properties, Kazan, 30 September-4 October 2002, pp. 54-55.
15. Yeckel A., Doty F.P., Derby J.J. J. Crystal Growth. 203:1999;87.
16. A. Yeckel, R.T. Goodwin, 2003 Cats2D (Crystallization and Transport Simulator), User Manual (available at http://www.msi.umn.edu/~yeckel/cats2d.html ).
17. V.À. Petrov, N.V. Marchenko, Mater. Sci. (Russia) (1985).
18. Deshko B.I., Karvatskii A.Ya., Lenkin A.V. Naukovi visti NTUU "KPI" 3(29):2003;20. (in Ukrainian).
19. O. Weinstein, S. Brandon, J. Crystal Growth, in preparation.
20. O. Weinstein, S. Brandon, J. Crystal Growth, submitted for publication.
21. O. Weinstein, Ph.D. Thesis, Technion - Israel Institute of Technology, in preparation.
22. Deshko V.I., Karvatskyy A.Ya., Lenkin A.V., Bykova S.V., Golyshev V.D., Gonik M.A., Tsvetovsky V.B. Naukovi visti NTUU "KPI" (in Ukrainian). 4(30):2003;35.