Laser irradiation of ion beam synthesized Ge nanocrystals in SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 218, Issue 1-4, 2004, Pages 337-342

  Hedler, A ^a   Urban, S ^b   Kups, T ^a   Kaiser, U ^a   Wesch, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

Ion implantation; Laser; Nanocrystals; Ripening; Silicon carbide

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL LATTICES; ENERGY DISPERSIVE SPECTROSCOPY; EXCIMER LASERS; HEAT CONDUCTION; ION IMPLANTATION; LASER BEAM EFFECTS; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

NANOCRYSTALS; RIPENING; THERMAL ANNEALING; TIME-RESOLVED REFLECTIVITY (TRR);

ION BEAMS;

EID: 2342632527     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.12.049     Document Type: Conference Paper

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