Optical and RBS studies in Tm implanted ZnO samples

Physica Status Solidi C: Conferences

Volumn 1, Issue 2, 2004, Pages 254-256

  Monteiro, T ^a   Soares, M J ^a   Neves, A ^a   Oliveira, M ^a   Rita, E ^b,c   Wahl, U ^b,c   Alves, E ^b,c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRIC EXCITATION; ENERGY GAP; INFRARED RADIATION; ION IMPLANTATION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; TRANSITION METALS;

PHOTOLUMINESCENCE (PL) SPECTROSCOPY; ROOM TEMPERATURE (RT); RUTHERFORD BACKSCATTERING/CHANNELING SPECTROSCOPY (RBS/C); SURFACE BARRIERS;

ZINC OXIDE;

EID: 2342628538     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303930     Document Type: Conference Paper

References (8)

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