Atomistic modeling of polar LaMnO3 surfaces

Sensors and Actuators, B: Chemical

Volumn 100, Issue 1-2, 2004, Pages 81-87

  Heifets, E ^a,b   Evarestov, R A ^c   Kotomin, E A ^b   Dorfman, S ^d   Maier, J ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^d TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Ab initio and semi empirical calculations; Atomic and electronic structure; LaMnO3; Thin oxide films

Indexed keywords

ANTIFERROMAGNETISM; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; FERROMAGNETISM; INTERFACIAL ENERGY; MAGNETIZATION; POLARIZATION; RELAXATION PROCESSES; STOICHIOMETRY;

AN INITIO AND SEMI-EMPIRICAL CALCULATIONS; LAMNO3; SPIN ORDERING; THIN OXIDE FILMS;

LANTHANUM COMPOUNDS;

EID: 2342622691     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2003.12.026     Document Type: Article

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