Computer modelling of radiation generated defects in BGO scintillators

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 218, Issue 1-4, 2004, Pages 145-147

  Jackson, R A ^a   Valerio, M E G ^b  

^a KEELE UNIVERSITY   (United Kingdom)

^b FEDERAL UNIVERSITY OF SERGIPE   (Brazil)

Author keywords

BGO; Bi4Ge3O12; Computer simulations; Intrinsic defects

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRONS; PHOSPHORS; PHOTONS; SOLID STATE LASERS; SURFACE TOPOGRAPHY;

BI4GE3O12 (BGO); DOPANT IONS; INTERATOMIC POTENTIALS; INTRINSIC DEFECTS;

BISMUTH COMPOUNDS;

EID: 2342616789     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.12.034     Document Type: Conference Paper

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