Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1-xAs/GaAs strained quantum wells

Vacuum

Volumn 74, Issue 2, 2004, Pages 263-267

  Sciana B ^a   Radziewicz, D ^a   Paszkiewicz, B ^a   Tlaczala M ^a   Sitarek, P ^a   Kudrawiec, R ^a   Misiewicz, J ^a   Kovac J ^b   Florovic M ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

doping; C V measurments; MOVPE growth; PC spectroscopy; PR spectroscopy

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRONIC PROPERTIES; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SUPERLATTICES; VOLTAGE MEASUREMENT;

ENERGY BAND SHAPE; EPILAYERS; OPTICAL TRANSITION; SUBBANDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2342597860     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.138     Document Type: Conference Paper

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