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Volumn 17, Issue , 2004, Pages 631-634

A tuned wideband LNA in 0.25μm IBM process for RF communication applications

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND NOISE; BYPASS CAPACITORS; LOW NOISE AMPLIFIERS (LNA); MILLER CAPACITANCE;

EID: 2342594474     PISSN: 10639667     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (12)

References (5)
  • 3
    • 0028547702 scopus 로고
    • Impact of distributed gate resistance on the performance of MOS Devices
    • Nov.
    • B.Razavi, R-H. Yan, K.F.Lee, "Impact of distributed gate resistance on the performance of MOS Devices", IEEE Trans. Circuits Syst. I Vol. 41, Nov. 1994
    • (1994) IEEE Trans. Circuits Syst. I , vol.41
    • Razavi, B.1    Yan, R.-H.2    Lee, K.F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.