Time-dependent magnetic field influence on GaAs crystal growth by vertical Bridgman method

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 404-410

  Lyubimova, Tatyana P ^a   Croell, Arne ^b   Dold, Peter ^b   Khlybov, Oleg A ^a   Fayzrakhmanova, Irina S ^a  

^a INSTITUTE OF CONTINUOUS MEDIA MECHANICS   (Russian Federation)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

A1. Computer simulation; A1. Directional solidification; A1. Magnetic fields; A1. Segregation; A2. Bridgman technique; B2. Semiconducting gallium arsenide

Indexed keywords

COMPUTER SIMULATION; FLUID STRUCTURE INTERACTION; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SOLIDIFICATION; THERMAL EFFECTS;

BRIDGMAN TECHNIQUE; FLOW STRUCTURE; ROTATING MAGNETIC FIELDS (RMF); TRAVELING MAGNETIC FIELDS (TMF);

CRYSTAL GROWTH;

EID: 2342585481     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.071     Document Type: Conference Paper

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