Orthorhombic-phase GaAs nanoparticles prepared by an electrochemical technique

Applied Surface Science

Volumn 229, Issue 1-4, 2004, Pages 97-104

  Nayak, J ^a   Sahu, S N ^a  

^a INSTITUTE OF PHYSICS   (India)

Author keywords

Defect activated phonon; GaAs nanoparticles; Micro Raman analysis; Orthorhombic phase; Phase transformation

Indexed keywords

COATINGS; ELECTROCHEMISTRY; ELECTRODEPOSITION; ELECTRON DIFFRACTION; GLASS; IMAGE ANALYSIS; INDIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; PHASE TRANSITIONS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DEFECT-ACTIVATED PHONONS; GAAS NANOPARTICLES; MICRO-RAMAN ANALYSIS; ORTHORHOMBIC PHASE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2342572934     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.01.051     Document Type: Article

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