Anticrossing between heavy-hole states in Si 0.2Ge 0.8/Si-coupled quantum wells grown on Si 0.5Ge 0.5 pseudosubstrate

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2497-2499

  Diehl, L ^a,e   Borak, A ^a   Mentese, S ^a   Grutzmacher D ^a   Sigg, H ^a   Gennser, U ^b   Sagnes, I ^b   Campidelli, Y ^c   Kermarrec, O ^c   Bensahel, D ^c   Faist, J ^d  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b UNIV PARIS SUD   (France)

^c STMICROELECTRONICS   (France)

^d UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^e HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTICROSSING ENERGY; COUPLING ENERGY; INTERSUBBAND ABSORPTION; OPTICAL TRANSITIONS; QUANTUM EFFECTS; STARK SHIFT;

ABSORPTION SPECTROSCOPY; ANISOTROPY; ANNEALING; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ELECTROMAGNETIC WAVE POLARIZATION; FERMI LEVEL; GROUND STATE; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2342570896     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1691173     Document Type: Article

References (11)

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