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Volumn 47, Issue 4, 2004, Pages 22-38

High efficiency power amplifier driving methods and circuits: Part I

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN EFFICIENCY; GATE CURRENT; HIGH FREQUENCY POWER AMPLIFIERS; POWER AMPLIFIER DRIVING CIRCUITS;

EID: 2342557235     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (11)
  • 1
    • 0027660697 scopus 로고
    • A high performance gate/base drive using a current source
    • September/October
    • O.H. Stielau and J.J. Schoeman, "A High Performance Gate/Base Drive Using a Current Source," IEEE Transactions on Industry Applications, Vol. 29, No. 5, September/October 1993, pp. 933-939.
    • (1993) IEEE Transactions on Industry Applications , vol.29 , Issue.5 , pp. 933-939
    • Stielau, O.H.1    Schoeman, J.J.2
  • 2
    • 2342462607 scopus 로고    scopus 로고
    • Power MOSFET switching waveforms: A new insight
    • October
    • Fairchild Semiconductors Corp., "Power MOSFET Switching Waveforms: A New Insight," Application Note AN-7502, October 1999.
    • (1999) Application Note , vol.AN-7502
  • 3
    • 84869983409 scopus 로고    scopus 로고
    • 2FET: A 5 volt gate drive power MOSFET
    • October
    • 2FET: A 5 Volt Gate Drive Power MOSFET," Application Note AN-7501, October 1999.
    • (1999) Application Note , vol.AN-7501
  • 4
    • 34748836605 scopus 로고    scopus 로고
    • Design and application guide for high speed MOSFET gate drive circuits
    • Topic 2, High Speed MOSFET Gate Drive Circuits, Texas Instruments Literature No. SLUP 169
    • L. Balogh, "Design and Application Guide for High Speed MOSFET Gate Drive Circuits," Texas Instruments Power Supply Design Seminar 1400, Topic 2, High Speed MOSFET Gate Drive Circuits, Texas Instruments Literature No. SLUP 169.
    • Texas Instruments Power Supply Design Seminar , vol.1400
    • Balogh, L.1
  • 5
    • 2342557610 scopus 로고
    • Use gate charge to design the gate drive circuit for power MOSFETs and IGBTs
    • International Rectifier Corp., "Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs," Application Note AN-944, 1995.
    • (1995) Application Note , vol.AN-944
  • 6
    • 0016521160 scopus 로고
    • Class-E - A new class of high efficiency tuned single-ended switching power amplifiers
    • June
    • N.O. Sokal and A.D. Sokal, "Class-E - A New Class of High Efficiency Tuned Single-ended Switching Power Amplifiers," IEEE Journal of Solid-State Circuits, Vol. SC-10, No. 3, June 1975, pp. 168-176.
    • (1975) IEEE Journal of Solid-State Circuits , vol.SC-10 , Issue.3 , pp. 168-176
    • Sokal, N.O.1    Sokal, A.D.2
  • 9
    • 0028423232 scopus 로고
    • Design of High Efficiency RF Class-D Power Amplifiers
    • May
    • S.A. El-Hamamsy, "Design of High Efficiency RF Class-D Power Amplifiers," IEEE Transactions on Power Electronics, Vol. 9, No. 3, May 1994, pp. 297-308.
    • (1994) IEEE Transactions on Power Electronics , vol.9 , Issue.3 , pp. 297-308
    • El-Hamamsy, S.A.1
  • 10
    • 0018051734 scopus 로고
    • Transistor power losses in the class-E tuned power amplifier
    • December
    • F.H. Raab and N.O. Sokal, "Transistor Power Losses in the Class-E Tuned Power Amplifier," IEEE Journal of Solid-State Circuits, Vol. SC-13, No. 6, December 1978, pp. 912-914.
    • (1978) IEEE Journal of Solid-State Circuits , vol.SC-13 , Issue.6 , pp. 912-914
    • Raab, F.H.1    Sokal, N.O.2
  • 11
    • 0020734806 scopus 로고
    • Effects of the collector current fall time on the class-E tuned power amplifier
    • April
    • M. Kazimierczuk, "Effects of the Collector Current Fall Time on the Class-E Tuned Power Amplifier," IEEE Solid-State Circuits, Vol. SC-18, No. 2, April 1983, pp. 181-192.
    • (1983) IEEE Solid-State Circuits , vol.SC-18 , Issue.2 , pp. 181-192
    • Kazimierczuk, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.