Valence band anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain

Physica Status Solidi C: Conferences

Volumn 1, Issue 3, 2004, Pages 547-550

  Gomes, P F ^a   Godoy, M P F ^a   Nakaema, M K K ^a   Iikawa, F ^a   Lamas, T E ^b   Quivy, A A ^b   Brum, J A ^a,c  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPOSITION; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; EXCITONS; INTERFACES (MATERIALS); LIGHT ABSORPTION; PHOTOLUMINESCENCE; SAMPLING; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

ENERGY SHIFT; EXCITONIC RECOMBINATION; TENSILE BIAXIAL STRAIN; VALENCE BANDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2342537119     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200304036     Document Type: Conference Paper

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